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DMP2160UFDB
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
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Features
* Low On-Resistance * 70m @VGS = -4.5V * 85m @VGS = -2.5V * 86m (typ) @VGS = -1.8V Low Gate Threshold Voltage, -0.9V Max Fast Switching Speed Low Input/Output Leakage Low Profile, 0.5mm Max Height Lead Free/RoHS Compliant (Note 2) "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
* * * * * * * * Case: DFN2020B-6 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish - NiPdAu annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.0065 grams (approximate)
* * * * * * *
DFN2020B-6
D
3
G
2
S
1
4
5
6
S
BOTTOM VIEW
G
D
TOP VIEW Internal Schematic
Maximum Ratings @TA = 25C unless otherwise specified
Characteristic Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Symbol PD RJA TJ, TSTG Value 1.4 89 -55 to +150 Unit W C/W C
Maximum Ratings
@TA = 25C unless otherwise specified Symbol VDSS VGSS ID IDM Value -20 12 -3.8 -13 Units V V A A
Characteristic Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Pulsed Drain Current (Note 4)
Notes: 1. 2. 3. 4.
Device mounted on FR-4 PCB, on minimum recommended, 2oz Copper pad layout. No purposefully added lead. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. Repetitive rating, pulse width limited by junction temperature.
DMP2160UFDB
Document number: DS31643 Rev. 4 - 2
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DMP2160UFDB
Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
Notes: 5.
@TA = 25C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) |Yfs| VSD Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf Min -20 -0.45 Typ 54 68 86 8 0.7 536 68 59 8.72 6.5 0.8 1.4 11.51 12.09 55.34 27.54 Max -1 100 800 -0.9 70 85 -1.2 Unit V A nA V m S V pF pF pF nC nC nC ns ns ns ns Test Condition VGS = 0V, ID = -250A VDS = -20V, VGS = 0V VGS = 8V, VDS = 0V VGS = 12V, VDS = 0V VDS = VGS, ID = -250A VGS = -4.5V, ID = -2.8A VGS = -2.5V, ID = -2.0A VGS = -1.8V, ID = -1.0A VDS = -5V, ID = -2.8A VGS = 0V, IS = -1.6A VDS = -10V, VGS = 0V f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = -4.5V, VDD = -10V, ID = -1.5A
VGEN = -4.5V, VDD = -10V, RL = 10, RG = 6
Short duration pulse test used to minimize self-heating effect.
10
VGS = -8.0V VGS = -4.5V
10
VDS = -5V
-ID, DRAIN CURRENT (A)
VGS = -2.0V
6
-ID, DRAIN CURRENT (A)
8
VGS = -2.5V
8
6
4
VGS = -1.5V
4
TA = 150C
2
VGS = -1.0V VGS = -1.2V
2
TA = 125C
TA = 85C TA = 25C TA = -55C
0 0
1 2 3 4 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics
5
0 0.5
1 1.5 -VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics
2
DMP2160UFDB
Document number: DS31643 Rev. 4 - 2
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DMP2160UFDB
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 0 1 2 3 4 5 6 7 -ID, DRAIN CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 8
0.14 0.12 0.1
TA = 125C
TA = 150C
VGS = -1.8V VGS = -2.5V VGS = -4.5V
0.08 0.06 0.04 0.02 0 0 2 3 4 5 6 7 -ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 1 8
TA = 85C TA = 25C TA = -55C
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
1.6 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED)
0.11
1.4
VGS = -2.5V ID = -2A
0.09
VGS = -2.5V ID = -2A
1.2
VGS = -4.5V ID = -5A
0.07
VGS = -4.5V ID = -5A
1.0
0.8
0.05
0.6 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature
0.03 -50
-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 6 On-Resistance Variation with Temperature
10,000 -VGS(TH), GATE THRESHOLD VOLTAGE (V)
f = 1MHz
1 0.9 0.8 0.7 0.6 0.5
ID = -250A ID = -1mA
C, CAPACITANCE (pF)
1,000
Ciss
100
Coss Crss
0.4 0.3 0.2 -50
10 0 8 12 16 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 7 Typical Capacitance 4 20
-25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 8 Gate Threshold Variation vs. Ambient Temperature
DMP2160UFDB
Document number: DS31643 Rev. 4 - 2
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(c) Diodes Incorporated
DMP2160UFDB
10
-IS, SOURCE CURRENT (A)
8
6
TA = 25C
4
2
0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 9 Diode Forward Voltage vs. Current
1 r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7 D = 0.5 D = 0.3
0.1
D = 0.1 D = 0.05
D = 0.9
D = 0.02
RJA(t) = r(t) * RJA RJA = 146C/W P(pk)
0.01
D = 0.01 D = 0.005
t1
t2 TJ - TA = P * RJA(t) Duty Cycle, D = t 1/t2
0.001 0.00001
0.0001
0.001
0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 10 Transient Thermal Response
10
100
1,000
Ordering Information
Part Number DMP2160UFDB-7
Notes:
(Note 6) Case DFN2020B-6 Packaging 3000/Tape & Reel
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
P2 = Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) Dot denotes Pin 1
P2
Date Code Key Year Code Month Code
2008 V Jan 1 Feb 2
2009 W Mar 3
2010 X Apr 4 May 5
YM
2011 Y Jun 6
2012 Z Jul 7 Aug 8
2013 A Sep 9
2014 B Oct O Nov N
2015 C Dec D
DMP2160UFDB
Document number: DS31643 Rev. 4 - 2
4 of 6 www.diodes.com
September 2009
(c) Diodes Incorporated
DMP2160UFDB
Package Outline Dimensions
DFN2020B-6 Dim Min Max Typ A 0.545 0.605 0.575 A1 0 0.05 0.02 A3 0.13 b 0.20 0.30 0.25 D 1.95 2.075 2.00 d 0.45 D2 0.50 0.70 0.60 e 0.65 E 1.95 2.075 2.00 E2 0.90 1.10 1.00 f 0.15 L 0.25 0.35 0.30 z 0.225 All Dimensions in mm
A A1 D
A3 SEATING PLANE
Pin#1 ID
D2 z
d
E E2 f f L e b
Suggested Pad Layout
Y X2 G1
C G
X1
G Y1 Z
Dimensions Z G G1 X1 X2 Y Y1 C
Value (in mm) 1.67 0.20 0.40 1.0 0.45 0.37 0.70 0.65
DMP2160UFDB
Document number: DS31643 Rev. 4 - 2
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September 2009
(c) Diodes Incorporated
DMP2160UFDB
IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2009, Diodes Incorporated www.diodes.com
DMP2160UFDB
Document number: DS31643 Rev. 4 - 2
6 of 6 www.diodes.com
September 2009
(c) Diodes Incorporated

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